Insulated Gate Bipolar Transistor (IGBT) technologies have evolved significantly over recent decades to meet the stringent requirements of high-power and high-efficiency applications. Combining the ...
In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...
Science, founded by Thomas A. Edison in 1880 and published by AAAS, today ranks as the world's largest circulation general science journal. Published 51 times a year, Science is renowned for its ...
Since the Industrial Revolution, access to energy and power has been crucial to economic prosperity throughout the world. According to statistics published by the U.S. Energy Information ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...
Extending the GenX3TM IGBT family to 600V, three additions are now available in three sub-classes denoted A3, B3, and C3. The classifications allow designers to dial in the best compromise between ...
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