PHOENIX, July 11, 2011/PRNewswire/ — RoseStreet Labs, (RSL), announced today the world's first demonstration of a long wavelength LED device utilizing low cost silicon wafer substrates. Green and ...
Plessey, an embedded technologies developer of microLED technologies intended for augmented reality and display markets, has developed what it calls The "world’s first GaN (gallium nitride) on silicon ...
Researchers at OSRAM Opto Semiconductors have succeeded in manufacturing high-performance blue and white LED prototypes in which the light-emitting gallium-nitride layers are grown on silicon wafers ...
A white LED breakthrough at the University of Cambridge could lead to mass production in the UK. “Its it is a way of making GaN LED die that is a factor of 10 cheaper: growing them on 150mm silicon ...
A Chinese LED start-up has demonstrated that InGaN-based LEDs grown on Si substrates by MOCVD can have similar performance to devices grown on conventional substrates. Lattice Power Corporation, an ...
University of Cambridge spin-out Porotech has launched the first product based on its new gallium nitride (GaN) production technique, which it says will “transform the electronics industry.” The ...
Agilent Technologies Inc. today introduced a series of extra-bright InGaN (indium gallium nitride) LEDs targeted for the outdoor electronic sign and signals market. These are the company's brightest ...
University of Cambridge micro-LED spin-out Porotech has raised £3m to develop its production technique and its supply chain ecosystem. Despite only spinning out in January 2020, Porotech claims to ...
Date Announced: 03 Jun 2010 Carlsbad, CA - U.S.A & Oxfordshire - U.K. - June 3, 2010 – Ostendo Technologies and Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group ...
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