Samsung Electronics Co., Ltd. today announced the development of 1 gigabit (Gb) mobile DRAM with a wide I/O interface, using 50 nanometer class* process technology. The new wide I/O mobile DRAM will ...
SSTL_18/ SSTL_2/ LPDDR/ LVTTL COMBO interface for DRAM application;; 2).Suppport ONFI3.1/Toggle2.0 interface;; 3).SMIC 55nm Logic Low Leakage Salicide 1.2V/1.8V/2.5V ...
The new Rambus memory interface, known as Yellowstone, received an official name today — XDR DRAM — and a timetable showing sample chips available the first half of 2004 and volume production by late ...
SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., announced today that it has begun mass producing the industry’s first 4-gigabyte (GB) DRAM package based on the second-generation ...
Samsung Electronics has developed a new DRAM module based on the Compute Express Link (CXL) interface, something that the company has touted as an industry first. The CXL-based DDR5 memory module ...
Today Rambus launched XDR2, which is the successor to the existing XDR a.k.a. “Yellowstone” DRAM interface technology that’s being used in the PS3. XDR2 DRAM is essentially an evolutionary step over ...
Designers can choose from different strngths of SDRAM, RDRAM, DDR1/2, GDDR, and XDR to fit specific applications. During its 30-plus years, the venerable dynamic RAM has undergone a series of ...
Most of the processors contained within automobiles are relatively small and with modest memory requirements that can be served by SRAM and non-volatile memory. The type of computing, image processing ...
Today Samsung Electronics announced that it has begun mass producing the industry’s first 4-gigabyte DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface, for use in high ...
As the workhorse of semiconductor memory, DRAM holds a unique place in the industry thanks to its large storage capacity and ability to feed data and program code to the host processor quickly. Lately ...
Samsung on Tuesday announced that it has begun mass production of 4GB DRAM packages based on the second generation High Bandwidth Memory (HBM2) interface using its 20-nanometer manufacturing process.
In general, the faster data can be retrieved, the faster the host processor can execute its algorithms. Internal parallelism on the processor side requires ever-faster data-transfer rates from ...
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