TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...

Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs ...

MANCHESTER, NH, Jan. 09, 2024 (GLOBE NEWSWIRE) -- Allegro MicroSystems, Inc. (ALGM) (“Allegro”) (Nasdaq: ALGM), a global leader in power and sensing solutions for motion control and energy efficient ...

DUBLIN--(BUSINESS WIRE)--The "Gate Driver IC Market Report: Trends, Forecast and Competitive Analysis" report has been added to ResearchAndMarkets.com's offering. The global gate driver IC market is ...

Many modern power MOSFETs reach low values of on-resistance at 5V even when the gate-to-source voltage is 5V. For heavy-duty power MOSFETS and, especially, IGBTs (insulated-gate bipolar transistors), ...

While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

Since the Industrial Revolution, access to energy and power has been crucial to economic prosperity throughout the world. According to statistics published by the U.S. Energy Information ...

Toshiba Electronics Europe has launched the TB67S579FTG, a next-generation stepper motor driver IC featuring Advanced ...

Renesas Electronics has unveiled a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for ...